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⚡ Graduate Aptitude Test in Engineering

GATE EC Exam Portal

Master high-yield GATE Electronics & Communication topics with Previous Year Questions, Daily Practice, Question Khazana (30-Year PYQs), and Virtual Calculator Mock Tests.

Module 01 • Recommended
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GATE EC Previous Year Questions

Official 34 Solved Papers Catalog. Practice 4 ways: Topic-wise chapter accordions, Subject-wise question banks, Year-wise full papers, or the Interactive Solver.

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Module 02 • Daily Speed
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Daily Quiz

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Module 03 • Simulation
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Mock Test Simulator

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Module 04 • High Yield
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PYQ Analyser & Trends

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🎯 Today's GATE EC Practice Target

Q1. A continuous-time signal is given by x(t) = 5 cos(200πt) + 10 sin(600πt). What is the minimum Nyquist sampling rate required to avoid aliasing? GATE EC • Signals & Systems
💡 Solution (Option B): The angular frequencies are ω₁ = 200π rad/s ⇒ f₁ = 100 Hz, and ω₂ = 600π rad/s ⇒ f₂ = 300 Hz. The maximum frequency is f_max = 300 Hz. The Nyquist sampling rate is f_s = 2 * f_max = 2 * 300 = 600 Hz.
Q2. In an ideal inverting operational amplifier circuit with input resistor R₁ = 10 kΩ and feedback resistor R_f = 100 kΩ, what is the closed-loop voltage gain A_v? GATE EC • Analog Circuits
💡 Solution (Option B): For an ideal inverting amplifier configuration, the closed-loop voltage gain is given by A_v = -R_f / R₁ = -100 kΩ / 10 kΩ = -10.
Q3. If the doping concentration on the acceptor side (N_A) of an abrupt silicon p-n junction is multiplied by 10, by how much does the built-in potential V_bi increase at room temperature (V_T ≈ 26 mV)? GATE EC • Semiconductor Devices (EDC)
💡 Solution (Option B): Built-in potential V_bi = V_T * ln(N_A * N_D / n_i²). When N_A becomes 10 * N_A, ΔV_bi = V_T * ln(10) ≈ 26 mV * 2.3026 ≈ 59.87 mV ≈ 60 mV.

📚 GATE 30-Year PYQ Khazana & Topper Registers

Signals & Systems and DSP

Linear Time-Invariant (LTI) systems, convolution integrals, Fourier series/transforms properties, Z-transforms ROC rules, and DFT/FFT twiddle factors.

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EDC & Analog Circuit Design

Energy band diagrams, drift and diffusion current densities, BJT small signal h-parameter models, MOSFET triode & saturation region currents, and feedback amplifier topologies.

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Communications & Electromagnetics (EMFT)

AM, FM bandwidth (Carson's rule), PCM quantization noise, BPSK/QPSK probability of error formulas, Maxwell's equations, Poynting vector, and Smith chart impedance matching.

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